| 摘要 |
PURPOSE:To obtain a laser device which is provided with a small astigmatism and resistive to returning light by providing refraction factor distribution having a lens effect to converge a laser beam on the center of a stripe in semiconductor laser medium. CONSTITUTION:An n-Ga0.5Al0.5As clad layer 2, a Ga0.86Al0.14As active layer 3, a p-Ga0.5Al0.5As clad layer 4, and an n-GaAs light absorption layer 5 are formed on an n-GaAs substrate 1 of a semiconductor laser device. The layer 5 is selectively removed to form a lens-like bit 6 repeatedly by a desired depth along a stripe. Then a p-Ga0.7Al0.3As layer 7, a p-Ga0.5Al0.5As layer 8, and a p-GaAs cap layer 9 are burried and caused to grow to provide a convex lens mechanism structure of which light mode makes refraction factor uniform in a direction along the stripe to make a laser device having a small astigmatism. |
