METHOD OF OBTAINING A GAAS EPITAXIAL STRUCTURE CAPABLE OF EMITTING IR RADIATION,申请号PL19840251009-传众专利搜索

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发明名称	METHOD OF OBTAINING A GAAS EPITAXIAL STRUCTURE CAPABLE OF EMITTING IR RADIATION
摘要
申请公布号	PL147450(B1)	申请公布日期	1989.06.30
申请号	PL19840251009	申请日期	1984.12.18
申请人		发明人
分类号	H01L;H01L33/00;H05B33/18;(IPC1-7):H01L33/00	主分类号	H01L
代理机构		代理人
主权项
地址

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