Process for the production of an X-ray mask

摘要

The invention relates to a process for the production of an X-ray mask which enables microstructuring of an X-ray absorber of heavy metal without a multilayer resist film with the aid of a merely single-layer resist film and with the use of the resist film as a qualitatively high-performance protective film on the pattern of the X-ray absorber. The process described is carried out, in particular, by forming an X-ray absorber (13) on an X-ray transparent thin film (12) and forming a photosensitive organic resist film (14) on this absorber, and by exposing and developing the resist film to form a resist mask for the formation of an X-ray absorber pattern (13), exposing the resist mask (14) by means of synchrotron radiation (15), and selectively etching the X-ray absorber (13) using the cured resist mask (14) to form the X-ray absorber pattern (13).