X-RAY LITHOGRAPHIC SYSTEM

摘要

An X-ray lithographic system has a convex mirror (51) onto which flux (54 min ) of synchrotron radiation (54) is incident. The flux (54 min ) is reflected by the mirror (51) onto a radiation sensitive film on a wafer (56). The mirror (51) is rotatively oscillated about an axis (52) to vary the angles of incidence of the flux (54 min ) on the mirror (51) and hence vary the positions on the wafer (56) to which various components (54 min a, 54 min b) are reflected. In this way a more uniform distribution is achieved in the exposure of the film (56), making the system suitable for exposing relatively large semiconductor wafers.