| 摘要 |
With a process for producing known semiconductor elements with a defined and passivated edge profile from a semiconductor wafer in mass production, only semiconductor elements with a simple bevelling of the lateral surface, i.e. with a so-called positive angle, for rectifier diodes of high-blocking capability can be achieved. The process according to the invention makes it possible to produce semiconductor elements with a layer sequence comprising at least three zones of alternatingly opposed types of conduction with a defined and passivated edge profile and with double bevelling of the lateral surface in the sense of a double positive angle. The process includes the following steps: Dividing a semiconductor wafer into semiconductor elements, stacking semiconductor elements and etching-resistant intermediate wafers alternately in a device, fixing the stack in a clamping device suitable for machining around its entire circumference, forming a depression on the circumference of the lateral surface of all the semiconductor elements by etching, filling the depressions with a passivating coating and separating the semiconductor elements out of the clamping device. Use of the process for producing controllable semiconductor power components.
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