| 摘要 |
A reticulated diode junction (26) has heavily doped regions (42) separated by undoped regions (44). Short wavelength (SWL) radiation which enters the diode structure through the undoped regions is absorbed within these regions and generates photocarriers. The recombination of these photocarriers within the undoped regions does not occur at a rate comparable to the recombination within the doped regions and as a result, a lateral charge carrier mobility is achieved whereby the SWL generated photocarriers are collected by laterally disposed portions of the reticulated junction, thereby permitting the SWL generated photocarriers to contribute to the overall photodiode current. The reticulated structure is achieved by an implantation or diffusion blocking means, such as a mask (62). |
