| 摘要 |
PURPOSE:To reduce internal stress in semiconductor layers formed on a semiconductor substrate and avoid development of crackings by dividing the semiconductor layers into checkerboard pattern. CONSTITUTION:After an n-type GaAs layer 2, a p-type GaAs layer 3 and a p-type AlGaAs layer 4 are successively built up on an n-type Si substrate 1 by epitaxial growth, the predetermined regions of the p-type AlGaAs layer 4, the p-type GaAs layer 3 and the n-type GaAs layer 2 are etched to divide the layers into checkerboard pattern. Then, after the etched trenches are filled with isolation insulating films (such as SiN films) 6 and meshed surface electrodes 7 are formed on the insulating films 6 so as to be brought into contact with the p-type AlGaAs layer 4, a rear electrode 8 and a reflection-proof film 5 are formed. If the spacing between the meshed surface electrodes 7 is about 1-2mm taking the resistance in the surface layer into account, the residual internal stress can be reduced and development of crackings can be avoided and a solar battery with a high reliability can be manufactured. |
