| 摘要 |
<p>A thin-film tantalum circuit and a thin-film conductive circuit are disclosed. The thin-film tantalum circuit is produced by forming a thin-film tantalum circuit on an insulator substrate or a semiconductor substrate via an adhesion layer, and partly or wholly covering the surface of said tantalum circuit with at least one metal selected from among palladium, gold, platinum and rhodium or an alloy thereof. The thin-film conductive circuit is prepared by forming an interlayer insulating layer sandwiched between the adhesion layers on said covering layer, and forming a circuit with at least one metal selected from among tantalum, palladium, gold, platinum and rhodium or an alloy thereof.</p> |
