| 摘要 |
PURPOSE:To prevent the generation of a stepped section, and to select the thickness of a pattern arbitrarily by exposing a photosensitive resin from the rear of a transparent substrate, using the pattern on the substrate as an exposure blocking region and burying the clearance of the pattern with the photosensitive resin in a self-alignment manner. CONSTITUTION:An Mo film is deposited onto a transparent barium borosilicate glass substrate 10, and a gate electrode wiring 11 is formed. An isoprene rubber group negative type photosensitive resin 12 is applied onto the gate electrode wiring so that film thickness is equalized approximately to the gate electrode wiring 11. The photosensitive resin is exposed by ultraviolet light 13 having the photosensitive wavelength of the negative type photosensitive resin 12 from the rear of the substrate 10, and developed. A Mo film in the gate electrode wiring 11 functions as an exposure blocking film to ultraviolet light 13 at that time, and the pattern 12a of the sensitized photosensitive region is left in regions except the gate electrode wiring 11. An SiNz film 14 as a gate insulating film and an a-Si film 15 as an active layer are deposited continuously. The a-Si film 15 is machined so that only a TFT section is left, and source and drain wirings 16 are shaped, thus manufacturing a bottom gate type a-SiTFT. |
