| 摘要 |
PURPOSE:To obtain a crystalline layer in the state that the layer of Hg1-XCdXTe does not produce crystalline grains and that the layer is not varied in composition by forming the layer on a substrate by lowering the temperature of a heating furnace which heats a supporting base and a slide member. CONSTITUTION:A supporting base 11, the first slide member 15 and the second slide member 18 are inserted into a reaction tube in H2 gas atmosphere, and heated to the temperature of approx. 500 deg.C in a heating furnace. Then, an alloy of Hg, Cd, Te is molten in a liquid reservoir 19, thereby forming the liquid phase 20 having a composition of Hg1-XCdXTe to be formed on a substrate. Then, only the second slide member 18 is moved in a direction of an arrow B, the reservoir 19 is steadily placed on a liquid reservoir 16 of the first member 15, and liquid phase 20 is dropped in the liquid reservoir 16. Thereafter, the first slide member 15 is moved in a direction of an arrow C, the reservoir 16 is steadily placed on a substrate 13, the liquid phase 20 of Hg1-XCdXTe is contacted on the substrate 13, the temperature of the furnace is lowered, thereby forming a crystal layer of Hg1-XCdXTe on the substrate 13. |
