发明名称 MATERIAL FOR RESIST
摘要 PURPOSE:To improve the sensitivity and resistance to dry-etching of a material for resist and to prevent generation of crack during development even when the material is applied to a thick film. CONSTITUTION:A material for resist contains 1-5wt.% azido compd. (A) and/or epoxy compd. (B) as an additive in an alpha-methyl styrene/'-methyl chloroacylate copolymer expressed by the formula. The components A, B function as a crosslinking agent and uncross-linked A, B function as plasticizer preventing the crack generation during development, but the effect is insufficient when the added amt. is below 1-5wt.%, and generation of negative image is caused if the amt. exceeds the above described range. In formula, l>=3; m<7; l+m=10; mol.wt. >=30,000. 4,4'-Diazido chalcone, etc. may be used in the component A, and glycidyl methacrylate may be used in the component B.
申请公布号 JPH01163737(A) 申请公布日期 1989.06.28
申请号 JP19870320144 申请日期 1987.12.19
申请人 FUJITSU LTD 发明人 NAKAMURA HIROKO;TAKECHI SATOSHI;TSURUNAGA YUKARI
分类号 G03C1/00;G03C1/72;G03F7/012;G03F7/039;H01L21/027 主分类号 G03C1/00
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