| 摘要 |
<p>PURPOSE:To reduce an occupied area of a resistor trimming pattern, by a structure wherein a second resistance trimming pattern is formed in parallel with a first resistance trimming pattern which is connected in parallel with a resistance non-trimming pattern. CONSTITUTION:In one resistor trimming pattern 12 out of multiple the same resistor trimming patterns which are connected in series across electrode terminal patterns 8 and 9, a first resistance trimming pattern 14 which is n times as long as a resistance non-trimming pattern 13 and to be trimmed in its resistance is connected in parallel with the resistance non-trimming pattern 13 which is not to be trimmed in its resistance, and further a second resistance trimming pattern 15 which is m times as long as the first resistance trimming pattern 14 and to be trimmed in its resistance. Now, the resistor trimming pattern 12 and the electrode terminal patterns 8, 9 are provided by forming a metal thin film of, e.g., platinum or the like on an insulating substrate 16. For the resistor trimming pattern 12, the second resistance trimming pattern 15 is burnt off by scanning a laser beam in the direction indicated by an arrow A or A'. In such a way, a cutting section 17 is formed and thereby fine trimming for the resistance is performed.</p> |
