| 摘要 |
<p>There is disclosed a charge transfer device including a semiconductor substrate (1), a charge transfer section formed on the semiconductor substrate (1) for transferring charges, at least two regions (101, 102, 103, 104) formed in the semiconductor substrate via a PN-junction, one of said regions (102) receiving the charges transferred through the charge transfer section and connected to an output terminal and at least one gate electrode (106, 107) formed on the semiconductor substrate (1) between the regions via an insulator film (2) to form a MOS transistor switch which is switched for controlling the sensitivity of the output stage and the dynamic range of the output signal.</p> |
