发明名称 |
Method for providing bridge contact between regions separated by a thin dielectric. |
摘要 |
<p>A method for forming a silicide bridge (e.g. 60A) between a doping region (e.g. 38B) and an adjacent poly-filled trench (24) separated by a thin dielectric (22). Silicon is selectively grown over exposed silicon regions under conditions that provide controlled lateral growth over the thin dielectric without also permitting lateral growth over other insulator regions. A refractory metal layer is then deposited and sintered under conditions that limit lateral silicide growth, forming the bridge. This process avoids the random fails produced by previous processes while enhancing the compatibility of bridge formation with shallow junctions, without introducing extra masking steps or other process complexities.</p> |
申请公布号 |
EP0321746(A1) |
申请公布日期 |
1989.06.28 |
申请号 |
EP19880119928 |
申请日期 |
1988.11.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CRITCHLOW, DALE L.;DEBROSSE, JOHN K.;MOHLER, RICK L.;NOBLE, WENDELL P., JR.;PARRIES, PAUL C. |
分类号 |
H01L21/768;H01L21/28;H01L21/74;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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