| 发明名称 |
Method of etching cavities and apertures in substrates and device for carrying out said method |
| 摘要 |
Deep cavities and apertures can be obtained with little undercutting (great etching factor) by etching in an artificial gravitational field (under the influence of centrifugal or centripetal forces).
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| 申请公布号 |
US4448635(A) |
申请公布日期 |
1984.05.15 |
| 申请号 |
US19830463761 |
申请日期 |
1983.02.04 |
| 申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
KUIKEN, HENDRIK K.;TIJBURG, RUDOLF P. |
| 分类号 |
H01L21/306;C23F1/00;C23F1/02;(IPC1-7):H01L21/30;B44C1/22;C03C15/00 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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