发明名称 DEVICE AND METHOD FOR LOW POWER OPTOELECTRONICS
摘要 <p>PURPOSE: To efficiently correct the parasitic capacitance characteristic of a photodetector such as a phototransistor by switching the impedance to a high impedance when a light emitting diode(LED) is on and switching it to a low impedance when the LED is off. CONSTITUTION: In order to minimize power while using a CMOS micro- processor, variable offset voltage 300 is inserted into the collector of the phototransistor 10. During the OFF time of the LED, parasitic capacitor BCbc can charge selective voltage of Vth -0.5 volt e.g. instead of applied voltage. The offset voltage 300 has two states to be turned to '0' in the on time of the LED and turned to offset in the OFF time of the LED. Since emitter voltage Ve is substantially started by optionally selected voltage, the higher threshold of the CMOS microprocessor can easily be corrected.</p>
申请公布号 JPH01164076(A) 申请公布日期 1989.06.28
申请号 JP19880197804 申请日期 1988.08.08
申请人 ROJITETSUKU INC;ROJITETSUKU SA 发明人 RUNE SOMEERU
分类号 G11B7/00;G11B7/005;H01L31/12;H03K17/00;H03K17/78;H03K17/795 主分类号 G11B7/00
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