| 摘要 |
PCT No. PCT/GB90/00692 Sec. 371 Date Sep. 25, 1991 Sec. 102(e) Date Sep. 25, 1991 PCT Filed May 4, 1990 PCT Pub. No. WO90/13921 PCT Pub. Date Nov. 15, 1990.An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching. |
