发明名称 |
Method for producing a spatially periodic semiconductor layer structure |
摘要 |
In a method for producing a spatially periodic semiconductor layer structure in the form of a superlattice composed of an alternating arrangement of strained semicondutor layers of at least two different semiconductor compositions forming at least one heterojunction, at least one of the semiconductor layers is provided with a doped layer which extends essentially parallel to the heterojunction and whose layer thickness is no greater than the thickness of the semiconductor layer in which it is produced.
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申请公布号 |
US4843028(A) |
申请公布日期 |
1989.06.27 |
申请号 |
US19880282940 |
申请日期 |
1988.12.08 |
申请人 |
ICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
HERZOG, HANS-JOEST;JORKE, HELMUT;KIBBEL, HORST |
分类号 |
H01L29/812;H01L21/20;H01L21/203;H01L21/26;H01L21/338;H01L29/15;H01L29/80 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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