Method of fabricating compound semiconductor laser using selective irradiation

摘要

Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junction stripe type semiconductor laser structure, or semiconductor grating by a single step of epitaxial growth while illuminating a desired part of substrate surface selectively with light at the time of epitaxial growth.