Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source

摘要

A method of diffusion of dopants (e.g. zinc) into III-V substrates (e.g. GaAs) using metal silicide and dopants (e.g. WxSiy:Zn) is disclosed. A cap layer (e.g. SiO2 or Si3N4) is also used. The zinc tungsten silicide is formed by cosputtering zinc and tungsten silicide (W5Si3). Applications include adjustment of threshold voltages in JFETs by rapid thermal pulsing of zinc into device channel regions and use of the zinc tungsten silicide as a base contact plus extrinsic base dopant source together with a nitride sidewall self-alignment.