| 发明名称 |
PROCESS FOR FORMING LDD MOS/CMOS STRUCTURES |
| 摘要 |
<p>PROCESS FOR FORMING LDD MOS/CMOS STRUCTURE A process for selectively forming NMOS/PMOS/CMOS integrated circuits and for selectively incorporating any or all of lightly doped drain-source (LDD) regions, sidewall gate oxide structures, and guard band regions.</p> |
| 申请公布号 |
CA1256588(A) |
申请公布日期 |
1989.06.27 |
| 申请号 |
CA19870526713 |
申请日期 |
1987.01.06 |
| 申请人 |
NCR CORPORATION |
发明人 |
SZLUK, NICHOLAS J.;MILLER, GAYLE W. |
| 分类号 |
H01L21/82;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/82 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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