| 摘要 |
PURPOSE:To form an amorphous silicon film at a high rate without lowering the brightness-darkness resistance ratio and denseness by producing plasma between counter electrodes, and red-heating a pretreated W filament to decompose a gaseous material. CONSTITUTION:The gaseous material such as SiH4 is introduced into a vacuum vessel 1 to keep the inside of the vessel at a specified pressure. In the vacuum vessel, plasma is produced between the oppositely arranged electrodes 2 and 3 by an RF power source 6. The pretreated W filament 31 arranged between both electrodes 2 and 3 is simultaneously red-heated by a heating power source 32. The W filament is pretreated by red-heating the filament in the gaseous atmosphere contg. SiH4, Si2H6, etc., or by exposing the filament in the plasma of the gas. The gaseous material is decomposed by the plasma and red heat, the decomposition product is deposited on a substrate 101 heated by a heater 4, and an amorphous silicon film is formed. |
