发明名称 |
Method for the production of semiconductor devices |
摘要 |
A method for the production of semiconductor devices comprising introducing source gases, etching gases or source molecules into a substrate to grow crystalline layers on said substrate or to etch said substrate, resulting in a semiconductor device, wherein said method further comprises applying a given electric potential to said substrate; applying an electric potential that is different from that of said substrate to an electron-beam irradiator disposed directly above said substrate; and irradiating said irradiator with electron beams from an electron-beam emitting means, whereby said substrate is irradiated with the secondary electron beams generated from said irradiator and/or with the electron beams transmitted through said irradiator.
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申请公布号 |
US4842679(A) |
申请公布日期 |
1989.06.27 |
申请号 |
US19870027735 |
申请日期 |
1987.03.19 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KUDO, HIROAKI;MATSUI, SADAYOSHI |
分类号 |
H01L21/205;H01J37/30;H01L21/263;H01L21/302 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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