| 摘要 |
PURPOSE:To improve surge withstand amount of a semiconductor device without degrading high frequency characteristics by forming a collector region and a reverse conductive type region at part except the active region in the collector region of a semiconductor element to form a P-N junction, and connecting a reverse conductive type region to an emitter electrode. CONSTITUTION:A region 10 (N type) of reverse conductive type to a collector region is formed at part except the vicinity of a base junction 4 of the active region in a collector region 1 (N type) to form a P-N junction 11, and the region 10 is connected via extension 1e' of the emitter electrode 1e at the hole of the oxidized silicon film 5 on the upper surface. The emitter electrode may be formed of metal such as aluminum used generally or (doped) polysilicon film for forming an emitter region 2e. |
