摘要 |
PURPOSE:To improve electrification characteristics and to enhance quality of character copying by forming a carrier blocking layer made of a P<+> type amorphous silicon carbide between a conductive substrate and a photosensitive layer consisting of an amorphous silicon. CONSTITUTION:The carrier blocking layer 101 to be formed between the conductive substrate 1 and the photosensitive layer 3 made of amorphous silicon is made of the P<+> type amorphous silicon carbide, resulting in giving sufficient carrier blocking function to the layer 101 and forming a photosensitive body high in electrifiability. The layer 101 has a high resistivity of 10<8>-10<11>OMEGA.cm, even when it is doped with boron by 100-1,000ppm, thus permitting the carrier blocking function to be made higher than the conventional ones and the electrification characteristics of the photosensitive body to be improved, and characters to be copied in high-quality. |