| 摘要 |
PURPOSE:To obtain a glass-coated semiconductor device which has good yield by selectively adhering glass to a semiconductor substrate with an insulating film as a mask, then providing the step of removing the adhered glass on the insulating film by blowing a high pressure gas, thereby simply and effectively removing adhered unnecessary glass. CONSTITUTION:A semiconductor substrate 31 is adsorbed and fixed to a spinner 32, and high pressure gas is blown from a nozzle 33 at the top. In this case, the spinner 32, in which the nozzle 33 is fixed, is roated, the position is moved in a direction X-X', or moved in a planetary motion. When the position of the spinner 32 is fixed, the nozzle 33 is moved in a direction X-X'. Since the glass adhered onto the insulating film can be completely removed, a defect which is produced by the adhered glass, i.e., a damage of the mask at the aligning time or a crack of the substrate can be reduced, and a improper withstand voltage between the gate and the cathode or between the emitter and the base can be largely improved. |
