CELLA PER TRANSISTOR A EFFETTO DI CAMPO A GATE ISOLATO A DOPPIA DIFFUSIONE (D MOSFET).,申请号IT19890020962-传众专利搜索

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发明名称	CELLA PER TRANSISTOR A EFFETTO DI CAMPO A GATE ISOLATO A DOPPIA DIFFUSIONE (D MOSFET).
摘要
申请公布号	IT8920962(D0)	申请公布日期	1989.06.22
申请号	IT19890020962	申请日期	1989.06.22
申请人	HYUNDAI ELECTRONICS INDUSTRIES CO. LTD	发明人	JONG OH KIM;JIN HYUNG KIM
分类号	H01L29/06;H01L29/78	主分类号	H01L29/06
代理机构		代理人
主权项
地址

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