| 摘要 |
PURPOSE:To produce an element having a tunnel junction with high dimentional precision, by decreasing the width of a resist mask through the utilization of a readhered layer produced by ion etching and transferring it to the width of a tunnel barrier layer. CONSTITUTION:A superconductive material is adhered and patterned on a substrate 11 to form a first superconductor electrode 12. The electrode 12 is then coated with a first insulator layer 14 and a second insulator 21 is provided in a region on the first superconductor electrode 12 including the area to be a tunnel junction. A resist mask 13 is provided with a window (h) in that area to be a tunnel junction by means of an ordinary resist process. Inactive ion beams of Ar or the like are applied over the whole surface like shower, and the second insulator layer 21 and the first insulator layer 14 are etched so as to form a tunnel junction having a layer 22 readhered thereon. The resist mask 13 is then peeled off. A tunnel barrier layer 15 is formed on the exposed portion of the first superconductor electrode 12, and a second superconductor electrode 16 is formed subsequently. |
