| 摘要 |
PURPOSE:To prevent the generation of a parasitic MOS transistor between a transfer transistor and storage capacitor, and to thin a dielectric film and lower applied voltage to the dielectric film by forming one conductivity type buried layer between an active region such as a source and a drain in the transfer transistor and a reverse conductivity type buried layer. CONSTITUTION:A MOSDRAM cell is composed of a p-type Si substrate 21, an n<+> buried layer 22, a p-type epitaxial layer 23, a field oxide film 24 isolating and insulating elements, a tranch section 25 to which storage capacitor C1 is shaped, an insulating film 26 such as an SiO2 film demarcating the region of the storage capacitor C1, and a p<+> buried layer formed by implanting B<+> ions, etc., to the p-type epitaxial layer 23 by high acceleration and high energy. The p<+> buried layer 28 is shaped between a drain 33 in a transfer transistor T1 and the n<+> buried layer 22 supplying a counter electrode 29a for the storage capacitor C1 with DC potential. Accordingly, the generation of a capacitance MOS transistor can be prevented. |
