| 摘要 |
PURPOSE:To manufacture a silicon nitride film having breakdown strength by growing the silicon nitride film onto a first electrode through a CVD method, growing a polysilicon film onto the silicon nitride film and oxidizing the whole in an oxygen atmosphere. CONSTITUTION:There are pinholes in a silicon nitride film 8 formed through a CVD method when it has small film thickness, but the pinholes are filled with one part of polysilicon when a polysilicon film 10 is shaped continuously onto the film 8. A silicon oxide film 10A is formed through oxidation treatment, and polysilicon in the pinholes is also oxidized. Since volume is expanded to approximately twice when polysilicon is oxidized, the oxidation of polysilicon displays an effect on the burying of the pinholes. The silicon nitride film 8 is also oxidized partially, and compacted. Breakdown is increased by said action. Since the capacitance of a capacitor is lowered when the polysilicon film 10 shaped has too thick film thickness, the thickness of the film 10 must be inhibited to 50Angstrom or less. |
