| 摘要 |
<p>PURPOSE:To screen the gate oxide film defect of a selecting transistor without giving fatigue to a memory transistor by impressing a high voltage to every word line and providing a test mode means to ground every bit line and control gate line. CONSTITUTION:By a test mode signal TE, output signals Xi, the inverse of Xi, Xj and the inverse of Xj of X address buffers 15 are made into an H level, and a high voltage VPP is generated from a high voltage generating circuit 16. By transistors 17 and 18 to which resetting signals are inputted, every control gate line 7 and bit line 3 are grounded, every output of a column data 11 is made into an 'L' level, and every word line 4 is boosted. At such a time, only to the gates of selecting transistors, the high voltages are impressed, and the drain and control gate of a memory transistor 2 are both maintained at a grounding level. Thus, without giving the fatigue to the memory transistor 2, the selecting transistors 1 and 5 are screened.</p> |
