| 摘要 |
PURPOSE:To obtain a semiconductor device having a good ohmic contact characteristic in any element, by mounting a semiconductor element on a substrate comprising a unit of copper or a copper alloy by using a brazing material sequentially laminated with a first, second and third metal layers comprising a specific alloy on a mounting surface in a semiconductor element. CONSTITUTION:A semiconductor element 2 is mounted on a substrate comprising a unit of copper or a copper alloy by using a brazing material of a three-layer structure sequentially laminated with a first metal layer 10 made of a gold alloy comprising gallium or antimony of 0.01-30wt.%, a second alloy 11 made of one or more kinds of elements selected from nickel, nickel alloy and silver and a third metal layer 12 made of an alloy layer whose main component is gold comprising germanium 5-20% and germanium. The thus manufactured semiconductor device still holds good electric characteristic even after a severe test made at 2atm at 150 deg.C for 500hours.
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