| 摘要 |
PURPOSE:To improve moisture-resistant properties by employing a structure wherein an insulating film is formed on the rear of a photosensor, i.e., on the opposite side to the photosensor or the photosensor is surrounded by the insulating film. CONSTITUTION:P-N-P-N devices are composed of an N-type semiconductor substrate 1, P-type regions 2 and N-type regions 3. Further, an insulating film 4 is provided under the N-type semiconductor substrate 1 by sputtering of SiO2. The P-N-P-N devices are separated by a canal 5. The chip is insulated from a lead frame 6 by resin 8 with which the insulating film 4 is bonded to a support plate 7 by thermocompression bonding and is fixed to the lead frame 6 with mounting adhesive 9. When a leakage current is measured between an anode 10 and a cathode 11, the current flows through a loop (a) composed of the P-type region 2, the N-type semiconductor substrate 1, the P-type region 2 and the N-type region 3. However, as the P-type region 2 on the side of the cathode 11 blocks the current, the leakage current is minimal. By employing a structure wherein the insulating film is provided beneath the P-N-P-N device or the insulating film is provided beneath the P-N-P-N devicevand further the support layer is provided beneath the insulating film, moisture penetration through the boundary between the resin part and the lead frame at the time of a moisture-resistant properties highly accelerated test gives little influence upon the characteristics and the leakage current is suppressed to be minimal and misoperation can be avoided.
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