| 摘要 |
PURPOSE:To reduce the width of a space smaller than that of a line by forming a first mask with a pattern of a predetermined section of a desired pattern, and forming a second mask on a layer to be etched in the pattern corresponding to its residue. CONSTITUTION:When a word line of a mask ROM is formed, a photoresist 3 is formed in a pattern of a predetermined section of a desired pattern on a desired pattern forming layer 1 of a polycrystalline silicon having, for example, 4000Angstrom or thickness, the width (s) of the line is 0.8mum, the width (s) of the space is 1.2mum, heat treated at a temperature of a range of a hundred and several tens -200 deg.C for several tens seconds to several minutes, or radiated with an ultraviolet ray to be cured for several tens second to several minutes. Then, a photoresist 5 having 0.8mum of width is formed on the space of the photoresist 3, and with the photoresists 3, 5 as masks the layer 1 is etched by RIE to obtain a desired pattern 1', and the width of the line is 0.8mum, and the width of the space is 0.2mum. Accordingly, the interval of the lines of the mask or the width of the space can be largely reduced. |
