| 发明名称 |
Method of producing an integrated circuit with medium voltage MOS transistors. |
| 摘要 |
<p>Method consisting in using a mask (22) to delimit the field implantation, and which overhangs relative to the mask (11) used to delimit the field oxide zones in a selective manner. <IMAGE></p> |
| 申请公布号 |
EP0321366(A1) |
申请公布日期 |
1989.06.21 |
| 申请号 |
EP19880420417 |
申请日期 |
1988.12.14 |
| 申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
BOIVIN, PHILIPPE |
| 分类号 |
H01L21/76;H01L21/266;H01L21/762;H01L21/8234;H01L27/088;H01L29/78 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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