发明名称 |
A semiconductor laser device. |
摘要 |
<p>There is disclosed a semiconductor laser device with a strip-channeled substrate (1) and a double-heterostructure multi-layered crystal (2,3,4) disposed over the substrate (1), the multi-layered crystal containing an active layer (3) for laser oscillation, which semiconductor laser device comprises: an optical waveguide that is formed within the active layer (3) just above the striped channel (21) of the substrate (1) based on a decrease in the effective refractive index due to the striped channel (21), the outside of which absorbs a laser beam produced in the active layer (3); a striped mesa (23) that is formed by the removal of the portions of the multi-layered crystal corresponding to the outside of the optical waveguide; and a pluraltiy of burying layers that are grown into the removed portions to prevent the diffusion of carrier in the transverse direction within the active layer (3).</p> |
申请公布号 |
EP0321294(A2) |
申请公布日期 |
1989.06.21 |
申请号 |
EP19880311971 |
申请日期 |
1988.12.16 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YAMAMOTO, SABURO;HOSODA, MASAHIRO;SASAKI, KAZUAKI;KONDO, MASAKI |
分类号 |
H01S5/12;H01S5/223;H01S5/227 |
主分类号 |
H01S5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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