| 摘要 |
PURPOSE:To obtain a positive type resist exceedingly strong against reactive sputtering etching by oxygen, superior in coating performance, and capable of easily introducing high sensitivity functional groups, by using a polymer compd. contg. specified monomer units. CONSTITUTION:A thick org. layermade of novolak resin, or the like is formed as the first layer on the material to be treated, such as a silicon base, and this layer is coated with a resist composed essentially of a polymer compd. contg. at least one monomer unit represented by the general formula shown in which R is H or lower alkyl, and R' is lower alkyl. The obtd. resist is exposed to an optical desired pattern radiation or light, and developed. The first thick org. layer is etched by the reactive sputter etching method using oxygen, with the obtained pattern used as a mask, and the obtained micropatterns formed on the thick org. layer is used as a mask for etching the material to be treated. |
