| 摘要 |
<p>PURPOSE:To reduce damage to a substrate and to correct the fine defect of the mask efficiently by detecting the defect part of the mask, scanning and projecting an ion beam by a stop deflecting electrode through an electrostatic lens, and correcting the defect part. CONSTITUTION:The defect part 3 of the mask is detected, a range including at least the defect part 3 is set as an ion beam irradiation area, and the intensity and irradiation time of the ion beam are set. Further, the ion beam 25 emitted by an ion source 8 is converged through the electrostatic lens 9, and scanned and projected by the deflecting electrode 11 to correct the defect part. Therefore, the scan area can be set according to the defect of the mask. Consequently, the damage to the substrate 1 is reduced and the fine defect is removed and corrected.</p> |
