发明名称 Fabricating method of semiconductor device.
摘要 <p>This invention relates to mounting of LSI chip (3 of multiple electrodes and narrow pitch such as gate array and microcomputer. In a semiconductor device having an LSI chip with bump electrode (36) affixed to a wiring board (32) by means of insulation resin (34), and the bump electrode of the LSI chip electrically connected by the contact between the wiring board and conductor wiring (30), by mounting with the bump electrode in a state of elastic deformation, both heat resistance and productivity are enhanced, and a semiconductor device of high reliability and low cost is obtained.</p>
申请公布号 EP0321239(A2) 申请公布日期 1989.06.21
申请号 EP19880311869 申请日期 1988.12.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 FUJIMOTO, HIROAKI;HATADA, KENZO;OCHI, TAKEO
分类号 H01L21/60;H01L21/56 主分类号 H01L21/60
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