发明名称 |
Semiconductor memory device and sense amplifier |
摘要 |
A semiconductor memory device having a memory plane defined by a plurality of memory cells, a decoder line for accessing the memory cells, a common data line on which a signal output from an accessed memory cell is collected, and a sense amplifier for amplifying the signal collected on the common data line. The sense amplifier has an amplifying circuit portion which is composed of a pair of common-collector type bipolar transistors supplied with the signal collected on the common data line as a differential input, and a plurality of MOS transistors for converting a change in current into a change in voltage. Each of the MOS transistors has a lightly-doped drain structure.
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申请公布号 |
US4841486(A) |
申请公布日期 |
1989.06.20 |
申请号 |
US19860946776 |
申请日期 |
1986.12.29 |
申请人 |
HITACHI, LTD. |
发明人 |
MINATO, OSAMU;MASUHARA, TOSHIAKI;ISHIBASHI, KOICHIRO;HANAMURA, SHOJI;HONJYO, SHIGERU;MORIWAKI, NOBUYUKI |
分类号 |
H01L27/11;G11C7/06;G11C11/416;G11C11/419;H01L21/8244;H01L27/10 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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