| 摘要 |
PURPOSE:To provide a semiconductor light emitting device which has a large current injection layer and is highly efficient in light emitting and emits visible radiation of short wavelength by providing a specific light emitting layer and a current injection layer which contacts thereto at a complete lattice matching condition and composed of a specific chemical formula whose band gap energy is larger than that of a light emitting layer. CONSTITUTION:On a GaAs substrate 5, a light emitting device is provided with a light emitting layer 7 composed of a chemical formula of IIaxIIbyVI(x+y=1), where IIa is Mg, Ca, Ba, Sr and IIb is Zn, Cd and VI is S, Se, Te, and a current injection layer 6 which contacts thereto at a lattice matching condition and composed of a chemical formula of IIax'IIby'VI(x'+y'=1) whose band cap is larger than that of a light emitting layer, and electrodes 8, 9 against the current injection layer and the light emitting layer. If a voltage is applied with a positive side of the electrode 9, carrier is injected into the light emitting layer 7 then light is emitted. |
