发明名称 GLASS-SEALED LIGHT-EMITTING SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the deterioration in a forward voltage and to simplify a manufacturing process by a method wherein an AuBe/Au alloy layer and the whole exposed surface of an alloy layer are coated with a gold layer so that an electrode can be formed. CONSTITUTION:A comparatively thin gold alloy layer 105 is formed on a P-type GaP layer 102 at an N-type GaP layer 101 and a P-type GaP layer 102. On the whole exposed surface of this gold alloy layer 105, i.e., on its surface and on its sides, a thick gold layer 11 is formed on an area which is larger than this gold alloy layer so that an anode electrode 12 can be constituted. On the other hand, a comparatively thin gold alloy layer 103 is formed on the N-type GaP layer 101 and a silver layer 106 is formed on the gold alloy layer 103 so that a cathode electrode 107 can be constituted. Because the anode electrode 12 is coated completely with a gold layer 11, it is not necessary to carry out a complicated process to protect an alloy layer at a high-temperature treatment by means of an acid, at a treatment by means of hydrogen peroxide, etc. during a manufacturing process of a device, including a coating process of a protective film, a patterning process, a process to remove the etched residual, etc. Therefore, the productivity can be improved.
申请公布号 JPS6352490(A) 申请公布日期 1988.03.05
申请号 JP19860195245 申请日期 1986.08.22
申请人 TOSHIBA CORP 发明人 INOUE KIYOSHI
分类号 H01L33/20;H01L33/30;H01L33/40;H01L33/56 主分类号 H01L33/20
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