| 摘要 |
PURPOSE:To execute a trimming operation with high accuracy by a method wherein a very small semiconductor resistance composed of an active layer formed on a semiconductor substrate and of electrodes formed on both ends of the active layer is controlled by causing damage to one part of the active layer part by using a focused ion accelerated at high speed. CONSTITUTION:An active layer 2 is formed in a semiconductor substrate 1; after that, damage is caused to a damage region 5 in one part of the active layer by injecting an ion beam accelerated at high speed so that the active layer 2 in a semiconductor resistance can become a desired resistance value; the active layer part inside the damage layer 5 is made inactive; thus, a resistance value of a semiconductor resistance is adjusted. By this setup, a process is simplified; the resistance value can be measured during a trimming operation; accordingly, it is possible to execute the trimming operation of high accuracy. |
