Method and arrangement for testing mega-bit memory modules with arbitrary test patterns in a multi-bit test mode

摘要

For testing memory modules of the mega-bit generation in the multi-bit test mode with arbitrary test patterns, whereby m cells of the cell field are simultaneously tested, at least one m-dimensional test word is generated in test word registers additionally integrated in the memory module MBS, with at least one test word being subsequently mapped onto the cells of an m-dimensional cell group or of a plurality of cell groups. Simultaneously, the test word or words are supplied to a comparison logic for comparing these to the test words upon readout of the test contents of a cell group and generating a good or bad signal for indicating the result of this inverse mapping, dependent on the comparison.