| 摘要 |
PURPOSE:To obtain large bright current. by providing a pair of transparent electrodes on a photoelectric conversion film, CONSTITUTION:Amorphous SiH 2 is deposited on a heat-resistive glass plate 1 by glow discharge decomposition of silane. Then, an N<+> type amorphous SiH film 3 is deposited by glow discharge decomposition of a mixture of silane and PH3. ITO 4 is then deposited by the spattering process. Finally, the films 4 and 3 except their regions where electrodes are to be provided are removed by RIE to form electrode patterns. Since an incident light 40 reaches also to the photoelectric conversion film below the electrodes, the device is allowed to have a lower resistance and provide larger bright current. |
