发明名称 Integrated silicon plasma switch
摘要 A switch device for one-time use in conducting very high currents comprising a silicon substrate on which is deposited a amorphous silicon or polysilicon strip extending as a bridge between first and second spaced-apart metal contacts deposited on the silicon substrate. Also deposited on the same substrate on opposite sides of the bridge and spaced from it are a set of high voltage contacts. When a high voltage is applied across the contacts, no current flows until a trigger current is made to flow through the bridge, the trigger current being sufficiently large to vaporize the bridge creating a plasma cloud. The plasma, being highly conductive, allows a very large current to flow between the high voltage contacts. The device of the present invention finds special application as part of a detonation system for high explosive ammunitions. This specification discloses various modifications to the above structure to achieve desired performance characteristics.
申请公布号 US4840122(A) 申请公布日期 1989.06.20
申请号 US19880182378 申请日期 1988.04.18
申请人 HONEYWELL INC. 发明人 NERHEIM, ELDON
分类号 F42B3/13;H01T2/02 主分类号 F42B3/13
代理机构 代理人
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