发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To bond ceramic without causing any damage to the ceramic to a metal substrate to be a heat sink by a method wherein the bonding between the heat sink material and the ceramic is accomplished by means of pressure welding. CONSTITUTION:Ceramic 12 is covered by a metal frame 13. A soft metal buffer plate 11, made of Al or Cu foil or the like capable of deformation under thermal stress, is inserted between the ceramic 12 and a heat sink 10. The bonding of the ceramic 12 to the heat sink 10 is accomplished when ends 14 of the metal frame 13 are welded under pressure to the heat sink 10. In a structure of this design wherein pressure welding is effected, because there is no direct contact between the ceramic and the metal layer of a relatively large thermal expansion factor, the ceramic of a relatively small thermal expansion factor may easily be bonded to the heat sink material.
申请公布号 JPS62287649(A) 申请公布日期 1987.12.14
申请号 JP19860130141 申请日期 1986.06.06
申请人 HITACHI LTD 发明人 TAKAHASHI MASAAKI;SAWAHATA MAMORU;KURIHARA YASUTOSHI;INOUE KOICHI;YATSUNO KOMEI
分类号 H01L23/34;H01L23/12;H01L23/36 主分类号 H01L23/34
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