发明名称 |
Method and measuring instrument for identifying the diffusion length of the minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies |
摘要 |
Method and measuring instrument for identifying the diffusion length of minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies. The method provides that the semiconductor crystal body is positioned between two electrolyte-filled measuring chamber halves and that the minority charge carriers of the photocurrent that results at a front side of the semiconductor crystal body due to irradiation is detected by an applied constant voltage between a backside of the semiconductor crystal body and a rear electrolyte at the backside of the semiconductor crystal body. Taking the thickness (D) of the semiconductor crystal body into consideration, the diffusion length (L) can be calculated from a mathematical equation using the quotient of the minority charge carrier current IGI/O occurring at the backside and at the front side of the semiconductor crystal body. The method provides topically resolved measurements for irradiation of the semiconductor crystal body. A measuring instrument for the implementation of the method is disclosed. The method can be used for determining the quality of semiconductor crystals.
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申请公布号 |
US4841239(A) |
申请公布日期 |
1989.06.20 |
申请号 |
US19880197603 |
申请日期 |
1988.05.20 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
FOELL, HELMUT;LEHMANN, VOLKER |
分类号 |
G01N27/00;G01R31/265;H01L21/66 |
主分类号 |
G01N27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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