| 摘要 |
<p>PURPOSE:To obtain the objective resistance temperature coefficient by a simple process without being affected by the condition of processing by a method wherein resistor adjusting patterns having different film thickness are integrally formed using a kind of resistor material. CONSTITUTION:A temperature sensitive resistor thin film 12 is formed on an insulative substrate 11, and a photoresist film 13 is provided on the thin film 12. The thin film 12 on the unnecessary part is removed, and a resistive adjusting pattern 14 is formed. The resist film 13 on the pattern 14 is removed, a photoresist film is formed, and a mask 15 is formed. A resistor adjusting pattern 14a, which is thickly formed by etching the pattern 14, and a pattern 14b which is thinly formed by etching are provided. As a result, the objective resistor temperature coefficient can be obtained by a simple process without being affected by the condition of processing.</p> |
