| 摘要 |
PURPOSE:To prevent the degradation in contrast by adsorption of moisture, etc., and to improve silylation efficiency by executing a treatment for patterning and exposing a resist film and a treatment for exposing the resist film to an org. compd. in a hermetic system to form an org. film pattern. CONSTITUTION:The resist film 22 is formed atop the subsurface 21 of a substrate and the treatment for patterning and exposing the resist film 22 and the treatment for exposing the same to the org. metal compd. are executed in the hermetic system to induce the selective reaction by exposing by which the org. film pattern is formed. The org. film pattern is then developed by anisotropic etching. Namely, the treatment for patterning and exposing the resist film 22 formed atop the subsurface 21 of the substrate and the treatment for exposing the same to the org. metal compd. are executed in the hermetic system and, therefore, the adsorption of moisture is obviated and the degradation in the contrast is prevented. The simplification of the stage by integrating the treatments for patterning and exposing and exposing the film to the org. metal compd. to one device is enabled. In addition, the silylation efficiency is improved by utilizing the exposing energy as the silylation energy as it is. |
